www.marktechopto.com 800.984.5337 mte8700n infrared emitting diode features: ? high output power ? parallel rays (excellent) ? high reliability in demanding environments applications: ? optical switches ? linear & rotary encoder absolute maximum ratings (ta=25oc) items symbol ratings unit forward current (dc) if 100 ma forward current (pulse) *1 ifp 1.0 a reverse voltage vr 5 v power dissipation pd 200 mw operating temperature topr -30 ~ +100 oc storage temperature tstg -40 ~ +125 oc junction temperature tj 125 oc lead soldering temp *2 tls 260 oc *1: tw=10s, t=10ms *2: time 5 sec max, position: up to 3mm from the body. dimensions (unit:mm)
www.marktechopto.com 800.984.5337 mte8700n graphs: electrical & optical characteristics (ta = 25oc) items symbol conditions min typ max unit power output po if=50ma -- 6.5 -- mw forward voltage vf if=50ma -- 1.55 2.0 v reverse current ir vr=5v -- -- 10 a peak wavelength p if=50ma -- 870 -- nm spectral line half width if=50ma -- 45 -- nm half intensity beam angle if=50ma -- 4 -- deg. $ v u 0 g g ' s f r v f o d z g d * ' 1 n " n " q q . ) [ junction capacitance cj 1mhz, v=0v -- 50 -- pf temp. coe cient of po p/t if=10ma -- -0.3 -- %/oc temp coe cient of vf v/t if=10ma -- -2.1 -- mv/oc
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